Memory maker Micron is expanding investment in its Taiwan, China, plant to boost capacity for 1z nanometer DDR4 DRAM, DigiTimes said, citing "sources familiar with the matter". As the company's latest process, it offers significant improvements in storage density, energy efficiency and speed. The standard process node for 1z nm is said to be between 12 ~ 14 nm, while the process node for 1y nm is said to be between 14 ~ 16 nm.

 

 

        Reports suggest that Micron's 1z nanometer capacity at its Taichung facility is climbing and is currently focused on making 16Gb DDR4 DRAM for desktops and notebooks.

 

       The company also plans to push for mass production of 1y nanometer processes at its Taoyuan plant, as well as work on low-power memory products for mobile platforms at its Hiroshima plant in Japan.

 

       Micron will also build most of its early DDR5 memory products on the 1z nanometer node over the next one to two years.

 

       The company still has plenty of time to polish a mature 1z nanometer DDR4 line before demand for DDR5 becomes strong.